VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 1 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 optocoupler, phototransistor output, low input current, 4 pin lsop, long creepage mini-flat package description the VOL617A has a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin lsop wide body package. it features a high current transfer ratio, low coupling capacitance, and high isolation voltage. the coupling device is design ed for signal transmission between two electrically separated circuits. features ? low profile package ? high collector emitter voltage, v ceo = 80 v ? isolation test voltage, 5000 v rms ? isolation voltage v iorm = 1050 v peak ? low coupling capacitance ? high common mode transient immunity ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 applications ?telecom ? industrial controls ? battery powered equipment ? office machines ? programmable controllers agency approvals (all parts are certified under base model VOL617A) ? ul1577, file no. e76222 ? cul csa 22.2 bulletin 5a, double protection ? din en 60747-5-5 (vde 0884-5), available with option 1 ? bsi: en 60065:2002, en 60950-1:2006 ? fimko en60950-1 ? cqc: gb8898-2011, gb4943.1-2011 e c a c 1 2 4 3 17295-6 ordering information VOL617A-#x001t part number ctr bin package option tape and reel agency certified/package ctr (%) 5 ma ul, cul, bsi, fimko, cqc 40 to 80 63 to 125 100 to 200 160 to 320 4 pin lsop, mini-flat, long creepage VOL617A-1t VOL617A-2t VOL617A-3t VOL617A-4t ul, cul, bsi, fimko, cqc, vde (option 1) 40 to 80 63 to 125 100 to 200 160 to 320 4 pin lsop, mini-flat, long creepage VOL617A-1x001t VOL617A-2x001t VOL617A-3x001t VOL617A-4x001t l s op-5 10.2 mm
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 2 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes ? stresses in excess of the abso lute maximum ratings can cause permanent damage to the device. functional operation of the devic e is not implied at these or any other conditions in excess of those give n in the operational sections of this document. exposure to abs olute maximum ratings for extended periods of the time can adversely affect reliability. (1) refer to reflow profile for soldering conditions for surface mounted devices. fig. 1 - total power dissipation vs. ambient temperature note ? minimum and maximum values are testing requirements. typical valu es are characteristics of the device and are the result of en gineering evaluation. typical values are for information only and are not part of the testing requirements. absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit input reverse voltage v r 6v power dissipation p diss 100 mw forward current i f 60 ma junction temperature t j 125 c output collector emitter voltage v ceo 80 v emitter collector voltage v eco 7v collector current i c 50 ma t p /t = 0.5, t p < 10 ms i c 100 ma power dissipation p diss 150 mw junction temperature t j 125 c coupler isolation test voltage between emitter and detector t = 1 min v iso 5000 v rms total power dissipation p tot 250 mw storage temperature range t stg - 55 to + 125 c ambient temperature range t amb - 55 to + 110 c soldering temperature (1) ? 10 s t sld 260 c electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit input forward voltage i f = 5 ma v f 1.16 1.5 v capacitance v r = 0 v, f = 1 mhz c o 45 pf reverse current v r = 6 v i r 100 a output collector emitter leakage current v ce = 10 v, i f = 0 a i ceo 10 200 na collector emitter capacitance v ce = 5 v, f = 1 mhz c ce 7pf coupler collector emitte r saturation voltage i c = 1.0 ma, i f = 5 ma v cesat 0.25 0.4 v coupling capacitance f = 1 mhz c c 0.25 pf 0 50 100 150 200 250 300 0 20 40 60 80 100 120 p tot - total power di ss ipation (mw) t amb - ambient temperature ( c) coupled device phototran s i s tor ir-diode
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 3 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 2 - test circuit fig. 3 - test circui t and waveforms note ? according to din en 60747-5-5 (vde 0884), 7. 4.3.8.2, (see figure 4). th is optocoupler is suitable for safe electrical isolat ion only within the safety ratings. compli ance with the safety ratings shall be ensured by means of suitable protective circuits. current transfer ratio (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit i c /i f i f = 5 ma, v ce = 5 v VOL617A-1 ctr 40 80 % VOL617A-2 ctr 63 125 % VOL617A-3 ctr 100 200 % VOL617A-4 ctr 160 320 % switching characteristics (t amb = 25 c, unless otherwise specified) parameter test condition symbol min. typ. max. unit turn on time v cc = 5 v, i c = 2 ma, r l = 100 ? t on 6s rise time v cc = 5 v, i c = 2 ma, r l = 100 ? t r 3.5 s turn off time v cc = 5 v, i c = 2 ma, r l = 100 ? t off 5.5 s fall time v cc = 5 v, i c = 2 ma, r l = 100 ? t f 5s isfh618a_10 input v out v cc = 5 v r l isfh618a_12 10 % 90 % input pulse output pulse t r t on t f t off safety and insulation rated parameters parameter test condition symbol min. typ. max. unit partial discharge test voltage - ? routine test 100 %, t test = 1 s v pd 2kv partial discharge test voltage - ? lot test (sample test) t tr = 60 s, t test = 10 s, (see figure 4) v iotm 8kv v pd 1.68 kv insulation voltage v iorm 1050 v peak insulation resistance v io = 500 v, t amb = 25 c r io 10 12 ? v io = 500 v, t amb = 100 c r io 10 11 ? v io = 500 v, t amb ? 150 c (construction test only) r io 10 9 ? safety rating - maximum input current i si 130 ma safety rating - maxi mum power dissipation p so 265 mw rated impulse voltage v iotm 8kv safety rating - maximu m ambient temperature t si 150 c clearance distance 8mm creepage distance 8mm insulation distance (internal) 0.4 mm
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 4 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 4 - derating diagram fig. 5 - test pulse diagram for sample test according to din en 60747-5-5 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 6 - forward current vs. forward voltage fig. 7 - collector current vs. collector emitter voltage (non-saturated) fig. 8 - collector emitter cu rrent vs. ambient temperature fig. 9 - collector current vs. collector emitter voltage (saturated) 0 25 50 75 125 0 50 100 150 200 300 t si - safety temperature (c) 150 100 250 phototransistor p so (mw) ir-diode i si (ma) t 13930 t 1 , t 2 = 1 s to 10 s t 3 , t 4 = 1 s t test = 10 s t stres = 12 s v iotm v pd v iowm v iorm 0 t 1 t test t tr = 60 s t stres t 3 t 4 t 2 0.1 1 10 100 0.6 0.8 1.0 1.2 1.4 1.6 i f - forward current (ma) v f - forward voltage (v) t amb = 110 c t amb = 75 c t amb = 25 c t amb = 0 c t amb = - 55 c 0 5 10 15 20 25 30 35 40 45 50 55 0 1 2 3 4 5 6 7 8 9 10 i c - collector current (ma) v ce - collector emitter voltage (non- s at) (v) i f = 30 ma i f = 35 ma i f = 1 ma i f = 20 ma i f = 15 ma i f = 10 ma i f = 5 ma i f = 25 ma 0.001 0.01 0.1 1 10 100 1000 10 000 - 60 - 40 - 20 0 20 40 60 80 100 120 i ce0 - leakage current (na) t amb - ambient temperature ( c) i f = 0 ma v ce = 40 v v ce = 24 v v ce = 12 v 0 5 10 15 20 25 30 0 0.1 0.2 0.3 0.4 i c - collector current (ma) v ce - collector emitter voltage ( s at) (v) i f = 1 ma i f = 25 ma i f = 10 ma i f = 5 ma i f = 2 ma
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 5 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 10 - normalized current transfer ratio (non-sat) vs. ambient temperature fig. 11 - normalized current transfer ratio (sat) vs. ambient temperature fig. 12 - normalized current transfer ratio (non-sat) vs. forward current fig. 13 - normalized current transfer ratio (sat) vs. forward current fig. 14 - f ctr vs. phase angle fig. 15 - f ctr vs. collector current 0 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 120 n ctr - normalized ctr (non- s aturated) t amb - ambient temperature ( c) i f = 5 ma normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c 0 0.2 0.4 0.6 0.8 1.0 1.2 - 60 - 40 - 20 0 20 40 60 80 100 120 n ctr - normalized ctr ( s at) t amb - ambient temperature ( c) normalized to ctr value: i f = 5 ma, v ce = 5 v, t amb = 25 c 0.0 0.5 1.0 1.5 2.0 2.5 0.1 1 10 100 n ctr - normalized ctr (n s ) i f - forward current (ma) t amb = 0 c t amb = 110 c t amb = - 55 c t amb = 25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100 n ctr - normalized ctr ( s at) i f - forward current (ma) t amb = 0 c t amb = - 55 c t amb = 25 c t amb = 110 c - 160 - 140 - 120 - 100 - 80 - 60 - 40 - 20 0 1 10 100 1000 pha s e angle (deg) f - cut-off fre q uency (khz) r l = 100 r l = 1000 v ce = 5 v 1 10 100 1000 0.1 1 10 100 f ctr (khz) i c (ma) v cc = 5 v
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 6 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 16 - switching time vs. load resistance fig. 17 - collector emitter saturation voltage vs. collector current fig. 18 - turn-on/turn-off time vs. forward current 0.1 1 10 100 1000 0 5 10 15 20 t on , t off s witching time ( s ) r l - load re s i s tance (k ) v ce = 5 v, i c = 2 ma t off ( s ) t on ( s ) 110 0 0.2 0.4 0.6 0.8 1.0 v cesat - collector emitter saturation voltage (v) i c - collector current (ma) 100 ctr = 50 % used 20 % used 95 11028 10 % used 01015 0 10 20 30 40 50 i f - forward current (ma) 20 95 11031 t on /t off - turn-on/turn-off time (s) saturated operation v s = 5 v r l = 1 k t off t on 5
VOL617A www.vishay.com vishay semiconductors rev. 1.6, 30-jan-13 7 document number: 82424 for technical ques tions, contact: optocoupleranswe rs@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package dimensions in millimeters package marking (example of VOL617A-3x001t) notes ? only option 1 is reflected in the pack age marking with the characters x1. ? tape and reel suffix (t) is not part of the package marking. tape and reel dimensions in millimeters fig. 19 - reel dimensio ns (3000 units per reel) fi g. 20 - tape dimensions 22533 7.50 0.20 0.10 0.10 0.70 + 0.30 - 0.40 technical drawing s according to din s pecification s 8.20 10.80 po ss ible footprint 2.54 0.90 4.10 max. 3.80 2.00 2.30 max. 2.54 nom. pin no. 1 identification 1 2 4 3 0.45 0.1 + 0.30 - 0.40 10.20 0.20 + 0.10 - 0.05 617a-3x1 v yww 68 esd sticker tape slot in core 330 (13") regular, special or bar code label 17999 22662 technical drawings according to din specification 4.25 8 2.3 2 4 2.7 0.3 16 7.5 10.6 ? 1.55 1.75 ? 1.6 5 direction of pulling out
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